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Improvements in GaAs JFETs for Deep Cryogenic OperationGallium arsenide junction field-effect transistors (GaAs JFETs) can be made immune to carrier freeze-out, making such transistors useful for the readout of detectorr arrays that operate at 4K.
Document ID
20060036116
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/24686
Authors
Cunningham, Thomas J.
Date Acquired
August 23, 2013
Publication Date
June 26, 1996
Subject Category
Engineering (General)
Distribution Limits
Public
Copyright
Other
Keywords
current flow
etch techniques Gallium Arsenide carrier freeze-out GaAs JFETsgate leakage

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