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GaAs JFETS Intended for Deep Cryogenic VLWIR Readout ElectronicsThis paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.
Document ID
20060038331
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/33843
Authors
Cunningham, T.
Fossum, E.
Date Acquired
August 23, 2013
Publication Date
June 29, 1994
Subject Category
Engineering (General)
Distribution Limits
Public
Copyright
Other
Keywords
GaAs JFETS deep cryogenic readout electronics

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