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Saturation current model for the N-channel Gsup4-FETA new saturation current model is presented for the n-channel G4-FET, a novel 4-gate transistor.
Document ID
20060039964
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/6359
Authors
Dufrene, B.
Blalock, B.
Cristoloveanu, S.
Mojarradi, M.
Kolawa, E. A.
Date Acquired
August 23, 2013
Publication Date
April 27, 2003
Distribution Limits
Public
Copyright
Other
Keywords
neuro-prosthetic devices cortical signals

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