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The contribution of diffusion to device upset cross sectionsA novel technique incorporating carrier recombination, for determining the charge collection efficiency funcition is presented and applied to a realistic, 3-D, memory device to obtain the upset cross section as a function of LET and orientation of incidence.
Document ID
20060040210
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/9438
Authors
Patterson, J. D.
Edmonds, L. D.
Date Acquired
August 23, 2013
Publication Date
January 1, 2002
Distribution Limits
Public
Copyright
Other
Keywords
charge collection diffusion SEU

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