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Ensemble Interactions in Strained Semiconductor Quantum DotLarge variations in InGaAs quantum dot concentrations were obtained with simultaneous growths on vicinal GaAs[001] substrates with different surface step densities.
Document ID
20060040918
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/18361
Authors
Leon, R.
Marcinkevicius, S.
Liao, X.
Zou, J.
Cockayne, D.
Fafard, S.
Date Acquired
August 23, 2013
Publication Date
January 1, 1999
Publication Information
Publication: Physical Review B
Distribution Limits
Public
Copyright
Other
Keywords
quantum dots optical properties photoluminescence

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