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Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High TemperatureTransmission electron microscopy is used to study the morphology and the composition profile of pure Ge islands grown at high temperature on (001) Si by molecular beam epitaxy.
Document ID
20060040919
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/18362
Authors
Leon, R.
Liao, X.
Zou, J.
Cockayne, D.
Qin, J.
Jiang, Z.
Wang, X.
Date Acquired
August 23, 2013
Publication Date
September 1, 1999
Publication Information
Publication: Physical Review B
Distribution Limits
Public
Copyright
Other
Keywords
transmission electron microscopy growth modes Ge islands

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