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Proton Damage Effects in Linear Integrated CircutsProton testing of linear circuits has identified devices where significantly more damage occurs at equivalent total dose levels with protons than tests with gamma rays.
Document ID
20060041417
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/20294
Authors
Rax, B.
Johnston, A.
Lee, C.
Date Acquired
August 23, 2013
Publication Date
July 20, 1998
Publication Information
Publication: IEEE Transactions on Nuclear Science
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
lateral pnp transistors proton damage effects linear integrated circuits gamma
rays ionization MOS radiation levels

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