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Total Ionizing Dose Effects in Flash MemoriesThis paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.
Document ID
20060041426
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/20307
Authors
Nguyen, D.
Lee, C.
Johnston, A.
Date Acquired
August 23, 2013
Publication Date
July 20, 1998
Subject Category
Plasma Physics
Distribution Limits
Public
Copyright
Other
Keywords
NOR NAND flash memory structures degradation charge pumps ionizing doses Samsung
KM29N16000 Intel 28F016SV

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