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Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron TransistorWe have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.
Document ID
20060042121
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/32454
Authors
Gunapala, S. D.
Park, J. C.
Lin, T. L.
Liu, J. K.
Bandara, K. M. S. V.
Date Acquired
August 23, 2013
Publication Date
January 1, 1994
Distribution Limits
Public
Copyright
Other
Keywords
infrared hot electron transistor photosensitive emitter

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