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Optically Addressed Ferroelectric Memory With Nondestructive ReadoutThis paper describes a new two-capacitor memory cell configuration that provides an enhanced bipolar optoelectric response from the edges of the capacitor at incident power as low as ~ 2mW/micrometer squared.
Document ID
20060042236
Acquisition Source
Jet Propulsion Laboratory
Document Type
Preprint (Draft being sent to journal)
External Source(s)
hdl:2014/33494
Authors
Thakoor, S.
Thakoor, A.
Date Acquired
August 23, 2013
Publication Date
January 1, 1994
Distribution Limits
Public
Copyright
Other
Keywords
memory cells

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