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Carbon Nanotube InterconnectMethod and system for fabricating an electrical interconnect capable of supporting very high current densities ( 10(exp 6)-10(exp 10) Amps/sq cm), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw, or SiuNv is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.
Document ID
20060050043
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Li, Jun
(NASA Ames Research Center Moffett Field, CA, United States)
Meyyappan, Meyya
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 23, 2013
Publication Date
August 22, 2006
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-390254
Patent Number: NASA-Case-ARC-15042-1
Patent Number: US-Patent-7,094,679
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-ARC-15042-1|US-Patent-7,094,679
Patent Application
US-Patent-Appl-SN-390254
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