InGaAsP Avalanche Photodetectors for Non-Gated 1.06 micrometer Photon-Counting Receivers

The efficient detection of single photons at 1.06 micron is of considerable interest for lidar/ladar systems designed for remote sensing an d ranging as well as for free-space optical transmission in photon-st arved applications. However, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon d etection efficiency (approximately 1 - 2%) at 1.06 micron, and InP/In GaAs SPADs designed for telecommunications wavelengths near 1.5 micro n exhibit high dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 micron, we have developed high performance , large area (80 - 200 micron diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 micron and based on a highly reliable planar geometry avalanche photodiode structure. We wil l show that dark count rates are sufficiently low to allow for non-ga ted operation while achieving detection efficiencies far surpassing t hose found for Si SPADs. At a detection efficiency of 10%, 80 micron diameter devices exhibit dark count rates below 1000 Hz and count rate s of at least 3 MHz when operated at -40 C. Significantly higher dete ction efficiencies (30 - 50%) are achievable with acceptable tradeoff s in dark count rate. In this paper, we will also discuss performance modeling for these devices and compare their behavior with longer wav elength InP-based InGaAs ternary absorber SPADs fabricated on a relat ed device design platform.