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Molecular implementation of molecular shift register memoriesAn electronic shift register memory (20) at the molecular level is described. The memory elements are based on a chain of electron transfer molecules (22) and the information is shifted by photoinduced (26) electron transfer reactions. Thus, multi-step sequences of charge transfer reactions are used to move charge with high efficiency down a molecular chain. The device integrates compositions of the invention onto a VLSI substrate (36), providing an example of a molecular electronic device which may be fabricated. Three energy level schemes, molecular implementation of these schemes, optical excitation strategies, charge amplification strategies, and error correction strategies are described.
Document ID
20080004412
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Beratan, David N.
Onuchic, Jose N.
Date Acquired
August 24, 2013
Publication Date
May 14, 1991
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-393176
Patent Number: US-PATENT-5,016,063
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,016,063
Patent Application
US-PATENT-APPL-SN-393176
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