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Using a delta-doped CCD to determine the energy of a low-energy particleThe back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.
Document ID
20080004673
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Nikzad, Shouleh
Croley, Donald R.
Murphy, Gerald B.
Date Acquired
August 24, 2013
Publication Date
August 21, 2001
Subject Category
Instrumentation And Photography
Report/Patent Number
Patent Number: US-PATENT-6,278,119
Patent Application Number: US-PATENT-APPL-SN-176700
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,278,119
Patent Application
US-PATENT-APPL-SN-176700
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