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Quasi four-level Tm:LuAG laserA quasi four-level solid-state laser is provided. A laser crystal is disposed in a laser cavity. The laser crystal has a LuAG-based host material doped to a final concentration between about 2% and about 7% thulium (Tm) ions. For the more heavily doped final concentrations, the LuAG-based host material is a LuAG seed crystal doped with a small concentration of Tm ions. Laser diode arrays are disposed transversely to the laser crystal for energizing the Tm ions.
Document ID
20080004814
Acquisition Source
Langley Research Center
Document Type
Other - Patent
Authors
Jani, Mahendra G.
Barnes, Norman P.
Hutcheson, Ralph L.
Rodriguez, Waldo J.
Date Acquired
August 24, 2013
Publication Date
June 17, 1997
Subject Category
Lasers And Masers
Report/Patent Number
Patent Number: US-PATENT-5,640,408
Patent Application Number: US-PATENT-APPL-SN-593438
Funding Number(s)
CONTRACT_GRANT: NAS1-19603
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,640,408
Patent Application
US-PATENT-APPL-SN-593438
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