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Micro-machined thin film hydrogen gas sensor, and method of making and using the sameA hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a microhotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.
Document ID
20080004885
Acquisition Source
Marshall Space Flight Center
Document Type
Other - Patent
Authors
DiMeo, Jr., Frank
Bhandari, Gautam
Date Acquired
August 24, 2013
Publication Date
July 24, 2001
Subject Category
Chemistry And Materials (General)
Report/Patent Number
Patent Number: US-PATENT-6,265,222
Patent Application Number: US-PATENT-APPL-SN-231277
Funding Number(s)
CONTRACT_GRANT: NAS8-98188
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,265,222
Patent Application
US-PATENT-APPL-SN-231277
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