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Low stress polysilicon film and method for producing sameMulti-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.
Document ID
20080004964
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Heuer, Arthur H.
Kahn, Harold
Yang, Jie
Date Acquired
August 24, 2013
Publication Date
October 15, 2002
Subject Category
Composite Materials
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-691706
Patent Number: US-PATENT-6,465,045
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,465,045
Patent Application
US-PATENT-APPL-SN-691706
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