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Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gateAn imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.
Document ID
20080005048
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Fossum, Eric R.
Nakamura, Junichi
Kemeny, Sabrina E.
Date Acquired
August 24, 2013
Publication Date
September 13, 2005
Subject Category
Instrumentation And Photography
Report/Patent Number
Patent Number: US-PATENT-6,943,838
Patent Application Number: US-PATENT-APPL-SN-749989
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,943,838
Patent Application
US-PATENT-APPL-SN-749989
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