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Ring resonator based narrow-linewidth semiconductor lasersThe present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.
Document ID
20080005123
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - Patent
Authors
Ksendzov, Alexander
Date Acquired
August 24, 2013
Publication Date
February 15, 2005
Subject Category
Lasers And Masers
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-057427
Patent Number: US-PATENT-6,856,641
Funding Number(s)
CONTRACT_GRANT: NAS7-1407
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,856,641
Patent Application
US-PATENT-APPL-SN-057427

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