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Liquid encapsulated crystal growthLow-defect crystals are grown in a closed ampoule under a layer of encapsulant. After crystal growth, the crystal is separated from the melt and moved into the layer of encapsulant and cooled to a first temperature at which crystal growth stops. The crystal is then moved into the inert gas ambient in the ampoule and further cooled. The crystal can be separated from the melt by decanting the melt into an adjacent reservoir or by rotating the ampoule to rotate the crystal into the encapsulant layer.
Document ID
20080005927
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Morrison, Andrew D.
Date Acquired
August 24, 2013
Publication Date
April 25, 1989
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-027981
Patent Number: US-PATENT-4,824,520
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,824,520
Patent Application
US-PATENT-APPL-SN-027981
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