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Reversible non-volatile switch based on a TCNQ charge transfer complexA solid-state synaptic memory matrix (10) having switchable weakly conductive connections at each node (24) whose resistances can be selectably increased or decreased over several orders of magnitude by control signals of opposite polarity, and which will remain stable after the signals are removed, comprises an insulated substrate (16), a set of electrical conductors (14) upon which is deposited a layer (18) of an organic conducting polymer, which changes from an insulator to a conductor upon the transfer of electrons, such as polymerized pyrrole doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ), covered by a second set of conductors (20) laid at right angles to the first.
Document ID
20080005942
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Nagasubramanian, Ganesan
DiStefano, Salvador
Moacanin, Jovan
Date Acquired
August 24, 2013
Publication Date
December 21, 1993
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-631230
Patent Number: US-PATENT-5,272,359
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,272,359
Patent Application
US-PATENT-APPL-SN-631230
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