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Method of fabricating multiwavelength infrared focal plane array detectorA multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.
Document ID
20080005967
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - Patent
Authors
Forrest, Stephen R.
Olsen, Gregory H.
Kim, Dong-Su
Lange, Michael J.
Date Acquired
August 24, 2013
Publication Date
May 21, 1996
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: US-PATENT-5,518,934
Patent Application Number: US-PATENT-APPL-SN-364671
Funding Number(s)
CONTRACT_GRANT: NAS7-1304
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,518,934
Patent Application
US-PATENT-APPL-SN-364671
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