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Heterojunction semiconductor deviceA layer of germanium on a body of P type conductivity single crystal indium phosphide provides a blocking heterojunction. This device will emit light when a suitable voltage is placed thereacross or the device can be used as a photoconductor to generate electrons when light is directed thereon.
Document ID
20080006901
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Harwylo, Frank Z.
Date Acquired
August 24, 2013
Publication Date
June 19, 1979
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: US-PATENT-4,158,849
Patent Application Number: US-PATENT-APPL-SN-890705
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,158,849
Patent Application
US-PATENT-APPL-SN-890705

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