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Multi-layer assemblies with predetermined stress profile and method for producing sameMulti-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.
Document ID
20080007063
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Heuer, Arthur H.
Kahn, Harold
Yang, Jie
Phillips, Stephen M.
Date Acquired
August 24, 2013
Publication Date
August 26, 2003
Subject Category
Nonmetallic Materials
Report/Patent Number
Patent Number: US-PATENT-6,610,361
Patent Application Number: US-PATENT-APPL-SN-449790
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-6,610,361
Patent Application
US-PATENT-APPL-SN-449790
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