Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace

A replenishment crucible is mounted adjacent the usual drawing crucible, from which a monocrystalline boule is drawn according to the Czochralski method. A siphon tube for molten semiconductor transfer extends from the replenishment crucible to the drawing crucible. Each crucible is enclosed within its own hermetic shell and is provided with its own heater. The siphon tube is initially filled with molten semiconductor by raising the inert atmospheric pressure in the shell surrounding the replenishment crucible above that surrounding the drawing crucible. Thereafter, adjustment of the level of molten semiconductor in the drawing crucible may be achieved by adjusting the level in either crucible, since the siphon tube will establish the same level in both crucibles. For continuous processing, solid semiconductor may be added to and melted in the replenishment crucible during the process of drawing crystals from the drawing crucible. A constant liquid level of melted semiconductor is maintained in the system by an optical monitoring device and any of several electromechanical controls of the rate of replenishment or crucible height.