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Crystal growingIn the growing of crystals, the formation of carbide contaminants is prevented by eliminating direct silica-graphite contact.
Document ID
20080007387
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - Patent
Authors
Schmid, Frederick
Khattak, Chandra P.
Date Acquired
August 24, 2013
Publication Date
March 17, 1981
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: US-PATENT-4,256,530
Patent Application Number: US-PATENT-APPL-SN-967114
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: JPL-954373
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,256,530
Patent Application
US-PATENT-APPL-SN-967114

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