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Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphireAlignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process of this invention involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.
Document ID
20080007410
Acquisition Source
Goddard Space Flight Center
Document Type
Other - Patent
Authors
Anthony, Thomas R.
Date Acquired
August 24, 2013
Publication Date
February 19, 1985
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: US-PATENT-4,499,655
Patent Application Number: US-PATENT-APPL-SN-445350
Funding Number(s)
CONTRACT_GRANT: NAS5-25654
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,499,655
Patent Application
US-PATENT-APPL-SN-445350
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