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Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD outputA monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.
Document ID
20080007431
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Fossum, Eric R.
Cunningham, Thomas J.
Krabach, Timothy N.
Staller, Craig O.
Date Acquired
August 24, 2013
Publication Date
January 31, 1995
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: US-PATENT-5,386,128
Patent Application Number: US-PATENT-APPL-SN-186185
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,386,128
Patent Application
US-PATENT-APPL-SN-186185
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