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High purity silane and silicon productionSilicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.
Document ID
20080008195
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - Patent
Authors
Breneman, William C.
Date Acquired
August 24, 2013
Publication Date
June 30, 1987
Subject Category
Inorganic, Organic And Physical Chemistry
Report/Patent Number
Patent Number: US-PATENT-4,676,967
Patent Application Number: US-PATENT-APPL-SN-363823
Funding Number(s)
CONTRACT_GRANT: JPL-954334
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,676,967
Patent Application
US-PATENT-APPL-SN-363823
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