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Single-source precursors for ternary chalcopyrite materials, and methods of making and using the sameA single source precursor for depositing ternary I-III-VI.sub.2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI.sub.2 stoichiometry built into a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI.sub.2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500.degree. C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.
Document ID
20080008711
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
Authors
Banger, Kulbinder K.
Hepp, Aloysius F.
Harris, Jerry D.
Jin, Michael Hyun-Chul
Castro, Stephanie L.
Date Acquired
August 24, 2013
Publication Date
January 31, 2006
Subject Category
Inorganic, Organic And Physical Chemistry
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-10/698,118
Patent Number: US-Patent-6,992,202
Funding Number(s)
CONTRACT_GRANT: NCC3-734
CONTRACT_GRANT: NCC3-958
CONTRACT_GRANT: NCC3-817
CONTRACT_GRANT: NCC3-947
CONTRACT_GRANT: NCC3-563
CONTRACT_GRANT: NCC3-947
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-6,992,202
Patent Application
US-Patent-Appl-SN-10/698,118
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