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Increasing the dynamic range of CMOS photodiode imagersA multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.
Document ID
20080009476
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Pain, Bedabrata
Cunningham, Thomas J.
Hancock, Bruce R.
Date Acquired
August 24, 2013
Publication Date
June 26, 2007
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: US-Patent-7,235,771
Patent Application Number: US-Patent-Appl-SN-11/191,603
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-7,235,771
Patent Application
US-Patent-Appl-SN-11/191,603
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