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High conductance ohmic junction for monolithic semiconductor devicesIn order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.
Document ID
20080012395
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Lewis, Carol R.
Date Acquired
August 24, 2013
Publication Date
September 13, 1988
Subject Category
Energy Production And Conversion
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-015538
Patent Number: US-PATENT-4,771,321
Funding Number(s)
CONTRACT_GRANT: NAS3-22232
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,771,321
Patent Application
US-PATENT-APPL-SN-015538
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