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Two-Step Plasma Process for Cleaning Indium Bonding BumpsA two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.
Document ID
20090022331
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
Authors
Greer, Harold F.
(California Inst. of Tech. Pasadena, CA, United States)
Vasquez, Richard P.
(California Inst. of Tech. Pasadena, CA, United States)
Jones, Todd J.
(California Inst. of Tech. Pasadena, CA, United States)
Hoenk, Michael E.
(California Inst. of Tech. Pasadena, CA, United States)
Dickie, Matthew R.
(California Inst. of Tech. Pasadena, CA, United States)
Nikzad, Shouleh
(California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 24, 2013
Publication Date
June 1, 2009
Publication Information
Publication: NASA Tech Briefs, June 2009
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NPO-45911
Report Number: NPO-45911
Distribution Limits
Public
Copyright
Public Use Permitted.
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