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Method of Generating X-Ray Diffraction Data for Integral Detection of Twin Defects in Super-Hetero-Epitaxial MaterialsA method provides X-ray diffraction (XRD) data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symme try belonging to different space groups. The material is mounted in a n X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Omega is set equal to (Theta(sub B)-Beta) where The ta(sub B) is a Bragg angle for a designated crystal plane of the allo y that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and Beta is the angle between the designate d crystal plane and a { 111 } crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (Theta(su b B)+Beta). The material can be rotated through an angle of azimuthal rotation Phi about the axis aligned with the material. Using the det ector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.
Document ID
20090029949
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Park, Yeonjoon
(NASA Langley Research Center Hampton, VA, United States)
Choi, Sang Hyouk
(NASA Langley Research Center Hampton, VA, United States)
King, Glen C.
(NASA Langley Research Center Hampton, VA, United States)
Elliott, James R.
(NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 24, 2013
Publication Date
July 7, 2009
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-12/254150
Patent Number: NASA-Case-LAR-17044-1
Patent Number: US-Patent-7558371
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-LAR-17044-1|US-Patent-7558371
Patent Application
US-Patent-Appl-SN-12/254150
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