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Numerical Optimization of the Thermal Field in Bridgman Detached GrowthThe global modeling of the thermal field in two vertical Bridgman-like crystal growth configurations, has been performed to get optimal thermal conditions for a successful detached growth of Ge and CdTe crystals. These computations are performed using the CrysMAS code and expand upon our previous analysis [1] that propose a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. The analysis of the vertical Bridgman configuration with two heaters, used by Palosz et al. for the detached growth of Ge, shows, consistent with their results, that the large wetting angle of germanium on boron nitride surfaces was an important factor to promote a successful detached growth. Our computations predict that by initiating growth much higher into the hot zone of the furnace, the thermal conditions will be favorable for continued detachment even for systems that did not exhibit high contact angles. The computations performed for a vertical gradient freeze configuration with three heaters representative of that used for the detached growth of CdTe, show favorable thermal conditions for dewetting during the entirely growth run described. Improved thermal conditions are also predicted for coated silica crucibles when the solid-liquid interface advances higher into the hot zone during the solidification process. The second set of experiments on CdTe growth described elsewhere has shown the reattachment of the crystal to the crucible after few centimeters of dewetted growth. The thermal modeling of this configuration shows a second solidification front appearing at the top of the sample and approaching the middle line across the third heater. In these conditions, the crystal grows detached from the bottom, but will be attached to the crucible in the upper part because of the solidification without gap in this region. The solidification with two interfaces can be avoided when the top of the sample is positioned below the middle position of the third furnace.
Document ID
20090034393
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Stelian, C.
(Timisoara Univ. Romania)
Volz, M. P.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Derby, J. J.
(Minnesota Univ. Minneapolis, MN, United States)
Date Acquired
August 24, 2013
Publication Date
August 9, 2009
Subject Category
Solid-State Physics
Report/Patent Number
M09-0622
M09-0446
Report Number: M09-0622
Report Number: M09-0446
Meeting Information
Meeting: 17th American Conference on Crystal Growth and Epitaxy/14th Biennial Workshop on Organometallic Vapor Phase Epitaxy/6th International Workshop on Modeling in Crystal Growth
Location: Lake Geneva, SI
Country: United States
Start Date: August 9, 2009
End Date: August 14, 2009
Sponsors: American Association for Crystal Growth
Distribution Limits
Public
Copyright
Public Use Permitted.
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