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Stability of Detached SolidificationBridgman crystal growth can be conducted in the so-called "detached" solidification regime, where the growing crystal is detached from the crucible wall. A small gap between the growing crystal and the crucible wall, of the order of 100 micrometers or less, can be maintained during the process. A meniscus is formed at the bottom of the melt between the crystal and crucible wall. Under proper conditions, growth can proceed without collapsing the meniscus. The meniscus shape plays a key role in stabilizing the process. Thermal and other process parameters can also affect the geometrical steady-state stability conditions of solidification. The dynamic stability theory of the shaped crystal growth process has been developed by Tatarchenko. It consists of finding a simplified autonomous set of differential equations for the radius, height, and possibly other process parameters. The problem then reduces to analyzing a system of first order linear differential equations for stability. Here we apply a modified version of this theory for a particular case of detached solidification. Approximate analytical formulas as well as accurate numerical values for the capillary stability coefficients are presented. They display an unexpected singularity as a function of pressure differential. A novel approach to study the thermal field effects on the crystal shape stability has been proposed. In essence, it rectifies the unphysical assumption of the model that utilizes a perturbation of the crystal radius along the axis as being instantaneous. It consists of introducing time delay effects into the mathematical description and leads, in general, to stability over a broader parameter range. We believe that this novel treatment can be advantageously implemented in stability analyses of other crystal growth techniques such as Czochralski and float zone methods.
Document ID
20090034394
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Mazuruk, K.
(Alabama Univ. Huntsville, AL, United States)
Volz, M. P.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Croell, A.
(Freiburg Univ. Germany)
Date Acquired
August 24, 2013
Publication Date
August 9, 2009
Subject Category
Solid-State Physics
Report/Patent Number
M09-0624
M09-0438
Report Number: M09-0624
Report Number: M09-0438
Meeting Information
Meeting: 17th American Conference on Crystal Growth and Epitaxy/14th Biennial Workshop on Organometallic Vapor Phase Epitaxy/6th International Workshop on Modeling in Crystal Growth
Location: Lake Geneva, WI
Country: United States
Start Date: August 9, 2009
End Date: August 14, 2009
Sponsors: American Association for Crystal Growth
Distribution Limits
Public
Copyright
Public Use Permitted.
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