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Raman Channel Temperature Measurement of SiC MESFET as a Function of Ambient Temperature and DC PowerRaman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25 C to 450 C, and the transistor is biased with VDS=10V and IDS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100 C higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.
Document ID
Document Type
Conference Paper
Ponchak, George E.
(NASA Glenn Research Center Cleveland, OH, United States)
Eldridge, Jeffrey J.
(NASA Glenn Research Center Cleveland, OH, United States)
Krainsky, Isay L.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 24, 2013
Publication Date
June 7, 2009
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
2009 International Microwable Symposium(Boston, MA)
Funding Number(s)
WBS: WBS 645846.
Distribution Limits
Work of the US Gov. Public Use Permitted.
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