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Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutionsBriefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.
Document ID
20100008508
Acquisition Source
Goddard Space Flight Center
Document Type
Other - Patent
Authors
Tzeng, Yonhua
Date Acquired
August 25, 2013
Publication Date
November 24, 2009
Subject Category
Nonmetallic Materials
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-10/772,740
Patent Number: US-Patent-7,622,151
Funding Number(s)
CONTRACT_GRANT: NCC5-165
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-7,622,151
Patent Application
US-Patent-Appl-SN-10/772,740
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