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Nonvolatile Memory Technology for Space ApplicationsThis slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.
Document ID
20100025764
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Oldham, Timothy R.
(Perot Systems Corp. Greenbelt, MD, United States)
Irom, Farokh
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Friendlich, Mark
(MEI Technologies, Inc. Houston, TX, United States)
Nguyen, Duc
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kim, Hak
(MEI Technologies, Inc. Houston, TX, United States)
Berg, Melanie
(MEI Technologies, Inc. Houston, TX, United States)
LaBel, Kenneth A.
(NASA Headquarters Washington, DC United States)
Date Acquired
August 24, 2013
Publication Date
June 23, 2010
Subject Category
Computer Operations And Hardware
Meeting Information
Meeting: 1st NASA Electronic Parts and Packaging (NEPP) Program: Electronic Technology Workshop
Location: Greenbelt, MD
Country: United States
Start Date: June 22, 2010
End Date: June 24, 2010
Sponsors: NASA Headquarters
Distribution Limits
Public
Copyright
Public Use Permitted.
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