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Method for selective CMP of polysiliconA method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.
Document ID
20100027535
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
Authors
Babu, Suryadevara V.
Natarajan, Anita
Hegde, Sharath
Date Acquired
August 24, 2013
Publication Date
May 25, 2010
Subject Category
Chemistry And Materials (General)
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-11/562,443
Patent Number: US-Patent-7,723,234
Funding Number(s)
CONTRACT_GRANT: NAG3-2744
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-7,723,234
Patent Application
US-Patent-Appl-SN-11/562,443
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