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nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layerAn nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.
Document ID
20100027555
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Gunapala, Sarath D.
Ting, David Z.
Hill, Cory J.
Bandara, Sumith V.
Date Acquired
August 24, 2013
Publication Date
June 15, 2010
Subject Category
Metals And Metallic Materials
Report/Patent Number
Patent Number: US-Patent-7,737,411
Patent Application Number: US-Patent-Appl-SN-12/249,749
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-7,737,411
Patent Application
US-Patent-Appl-SN-12/249,749
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