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High temperature strain gagesA ceramic strain gage based on reactively sputtered indium-tin-oxide (ITO) thin films is used to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500.degree. C. A scanning electron microscopy (SEM) of the thick ITO sensors reveals a partially sintered microstructure comprising a contiguous network of submicron ITO particles with well defined necks and isolated nanoporosity. Densification of the ITO particles was retarded during high temperature exposure with nitrogen thus stabilizing the nanoporosity. ITO strain sensors were prepared by reactive sputtering in various nitrogen/oxygen/argon partial pressures to incorporate more nitrogen into the films. Under these conditions, sintering and densification of the ITO particles containing these nitrogen rich grain boundaries was retarded and a contiguous network of nano-sized ITO particles was established.
Document ID
20110013020
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Gregory, Otto J.
You, Tao
Date Acquired
August 25, 2013
Publication Date
June 21, 2011
Subject Category
Instrumentation And Photography
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-12/228,233
Patent Number: US-Patent-7,963,171
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-7,963,171
Patent Application
US-Patent-Appl-SN-12/228,233
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