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Effect of Radiation Exposure on the Retention of Commercial NAND Flash MemoryWe have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. Under some circumstanc es, radiation exposure has a significant effect on the retention of f lash memories.
Document ID
20110013317
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Oldham, Timothy R. (Dell Services Federal Government, Inc. Seabrook, MD, United States)
Chen, D. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Friendlich, M. (MEI Technologies, Inc. Seabrook, MD, United States)
Carts, M. A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Seidleck, C. M. (MEI Technologies, Inc. Seabrook, MD, United States)
LaBel, K. A. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 25, 2013
Publication Date
July 25, 2011
Subject Category
Computer Operations And Hardware
Report/Patent Number
GSFC.CPR.4958.2011
GSFC.ABS.4551.2011
Report Number: GSFC.CPR.4958.2011
Report Number: GSFC.ABS.4551.2011
Meeting Information
Meeting: Nuclear and Space Radiation Effects Conference (NSREC)
Location: Las Vegas, NV
Country: United States
Start Date: July 25, 2011
End Date: July 29, 2011
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Public Use Permitted.

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