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Single photon detection with self-quenching multiplicationA photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.
Document ID
20110015903
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Zheng, Xinyu
Cunningham, Thomas J.
Pain, Bedabrata
Date Acquired
August 25, 2013
Publication Date
September 20, 2011
Subject Category
Physics (General)
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-12/370,066
Patent Number: US-Patent-8,022,351
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,022,351
Patent Application
US-Patent-Appl-SN-12/370,066

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