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Reproducible Growth of High-Quality Cubic-SiC LayersSemiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.
Document ID
Acquisition Source
Glenn Research Center
Document Type
Other - NASA Tech Brief
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Powell, J. Anthony
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 25, 2013
Publication Date
February 1, 2004
Publication Information
Publication: NASA Tech Briefs, February 2004
Subject Category
Nonmetallic Materials
Report/Patent Number
Distribution Limits
Public Use Permitted.
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