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MMIC HEMT Power Amplifier for 140 to 170 GHzA three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.
Document ID
20110023940
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
Authors
Samoska, Lorene
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Radisic, Vesna
(HRL Labs., LLC Malibu, CA, United States)
Ngo, Catherine
(HRL Labs., LLC Malibu, CA, United States)
Janke, Paul
(HRL Labs., LLC Malibu, CA, United States)
Hu, Ming
(HRL Labs., LLC Malibu, CA, United States)
Micovic, Miro
(HRL Labs., LLC Malibu, CA, United States)
Date Acquired
August 25, 2013
Publication Date
November 1, 2003
Publication Information
Publication: NASA Tech Briefs, November 2003
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NPO-30127
Report Number: NPO-30127
Distribution Limits
Public
Copyright
Public Use Permitted.
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