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Scanning Tunneling Optical Resonance MicroscopyScanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically < 10 Hz) that the feedback circuit could respond, then the voltage applied to the piezoelectric tip-height actuator could be measured by use of a lock-in amplifier locked to the modulation (chopping) signal. However, at a high modulation frequency (typically in the kilohertz range or higher), the feedback circuit would be unable to respond. In this case, the photoenhanced portion of the tunneling current could be measured directly. For this purpose, the tunneling current would be passed through a precise resistor and the voltage drop would be measured by use of the lock-in amplifier.
Document ID
20110023968
Acquisition Source
Glenn Research Center
Document Type
Other - NASA Tech Brief
Authors
Bailey, Sheila
(NASA Glenn Research Center Cleveland, OH, United States)
Wilt, Dave
(NASA Glenn Research Center Cleveland, OH, United States)
Raffaelle, Ryne
(Rochester Inst. of Tech. NY, United States)
Gennett, Tom
(Rochester Inst. of Tech. NY, United States)
Tin, Padetha
(National Center for Microgravity Research on Fluids and Combustion Cleveland, OH, United States)
Lau, Janice
(Ohio Aerospace Inst. Brook Park, OH, United States)
Castro, Stephanie
(Ohio Aerospace Inst. Brook Park, OH, United States)
Jenkins, Philip
(Ohio Aerospace Inst. Brook Park, OH, United States)
Scheiman, Dave
(Ohio Aerospace Inst. Brook Park, OH, United States)
Date Acquired
August 25, 2013
Publication Date
October 1, 2003
Publication Information
Publication: NASA Tech Briefs, October 2003
Subject Category
Man/System Technology And Life Support
Report/Patent Number
LEW-17344
Distribution Limits
Public
Copyright
Public Use Permitted.
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