Hysteresis in the Active Oxidation of SiCSi and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of ~10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.
Document ID
20120000845
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Jacobson, Nathan S. (NASA Glenn Research Center Cleveland, OH, United States)
Harder, Bryan J. (NASA Glenn Research Center Cleveland, OH, United States)
Myers, Dwight L. (East Central Univ. Ada, OK, United States)
Date Acquired
August 25, 2013
Publication Date
October 9, 2011
Subject Category
Physics (General)
Report/Patent Number
E-18069
Meeting Information
Meeting: 220th ECS Meeting and Electrochemical Energy Summit