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Chalcogenide Nanoionic-based Radio Frequency SwitchA nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.
Document ID
20140001870
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Nessel, James
Lee, Richard
Date Acquired
March 14, 2014
Publication Date
April 2, 2013
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-13/050,229
Patent Number: US-Patent-8,410,469
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,410,469
Patent Application
US-Patent-Appl-SN-13/050,229
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