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N Channel JFET Based Digital Logic Gate StructureAn apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.
Document ID
20140001879
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Krasowski, Michael J
Date Acquired
March 14, 2014
Publication Date
April 9, 2013
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-13/098,918
Patent Number: US-Patent-8,416,007
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,416,007
Patent Application
US-Patent-Appl-SN-13/098,918
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